Publications | Oxide Electronics Lab

2024

I. Silber, A. Azulay, A. Basha, D. Ketchker, M. Baskin, A. Yagoda, L. Kornblum, A. Kohn, Y. Dagan. Enhanced Superconductivity in SrTiO3-Based Interfaces via Amorphous Al2O3 Capping. arXiv:2402.14051 (2024)
L. Shoham, M. Baskin, Y. Kauffmann, A. Zakharova, T. Yoshida, S. Miyasaka, C. Piamonteze, L. Kornblum. The Impact of the Near-Surface Region on the Interpretation of X-Ray Absorption Spectroscopy. arXiv:2308.06724 (2024)
R.G. Nir-Harwood, G. Cohen, A. Majumdar, R. Haight, E. Ber, L. Shoham, L. Kornblum, L. Gignac, E. Ordan, Y. Keller, E. Yalon. Drift of Schottky Barrier Height in Phase Change Materials. ACS Nano 18 8029 (2024)
I. Yokev, M. Agrawal, B. Eyadat, V. Kostianovskii, L. Gal, A. Cohen, L. Kornblum, N. Dharmarasu, K. Radhakrishnan, M. Orenstein, G. Bahir. Toward Monolithic GaN on Si Inter-Sub-Band Infrared Optoelectronics. IEEE Trans. Elect. Dev. 71, 2497 (2024)
R. Cai, I. Weisbord, S. Caspi, L. Naamat, L. Kornblum, A. Grinberg Dana, T. Segal-Peretz. Rational Design and Fabrication of Block Copolymer Templated Hafnium Oxide Nanostructures. Chemistry of Materials. 36, 1591 (2024). PDF

2023

D. Cohen Azarzar, M. Baskin, A. Lindblad, F. Trier, L. Kornblum. Scalable and Tunable Conductive Oxide Interfaces. APL Materials 11, 111118 (2023). Full text, SI, raw data
B. Das, L. Wysocki, J. Schopf, L. Yang, A. Capua, P.H.M. van Loosdrecht, L. Kornblum. Tilted Magnetic Anisotropy with In-Plane Broken Symmetry in Ru-Substituted Manganite Films. Advanced Electronic Materials 9, 22300253 (2023). (open access)
R. Erlandsen, T.D. Pomar, L. Kornblum, N. Pryds, R. Bjork, D.V. Christensen. Universal Material Trends in Extraordinary Magnetoresistive Devices. J. Phys.: Materials, 6, 045010 (2023). Full text
L. Shoham, M. Baskin, T. Tiwald, G. Ankonina, M.G. Han, A. Zakharova, S. Caspi, S. Joseph, Y. Zhu, I.H. Inoue, C. Piamonteze, M.J. Rozenberg, L. Kornblum. Bandwidth Control and Symmetry Breaking in a Mott-Hubbard Correlated Metal. Advanced Functional Materials, 2302330 (2023). Full text, SI, raw data

2022

Y. Li, W. Wang, D. Zhang, M. Baskin A. Chen, S. Kvatinsky, E. Yalon, L. Kornblum. Scalable Al2O3−TiO2 Conductive Oxide Interfaces as Defect Reservoirs for Resistive Switching Devices. Advanced Electronic Materials 2200800 (2022). PDF, SI, raw data
S. Boyeras Baldoma, S.M. Pazos, F.L. Aguirre, G. Ankonina, L. Kornblum, E. Yalon, F. Palumbo. Wear-out and Breakdown of Ta2O5/Nb:SrTiO3 Stacks. Solid State Electronics 198, 108462 (2022). Email for a free PDF.
R. Erlandsen, R. Bjørk, L. Kornblum, N. Pryds, D.V. Christensen. Symmetry Breaking in Magnetoresistive Devices. Phys. Rev. B 106, 014408 (2022). PDF [2]
A. Basha, G. Levi, T. Amrani, Y. Li, G. Ankonina, P. Shekhter, L. Kornblum, I. Goldfarb, A. Kohn. Elastic and Inelastic Mean Free Paths for Scattering of Fast Electrons in Thin-Film Oxides. Ultramicroscopy 240, 113570 (2022). Preprint
G. Koster, Y. Birkholzer, M. Huijben, G. Rijnders, M. Spreitzer, L. Kornblum, S. Smink. Growth Studies of Heteroepitaxial Oxide Thin Films Using Reflection High-Energy Electron Diffraction. Appeared in Epitaxial Growth of Complex Metal Oxides, 2nd Ed. (Woodhead Publishing, 2022).
P. Abbasi, M.R. Barone, M. Cruz-Jauregu, D. Valdespino-Padilla, H. Paik, T. Kim, L. Kornblum, D.G. Schlom, T.A. Pascal, D.P. Fenning. Ferroelectric Modulation of Surface Electronic States in BaTiO3 for Enhanced Hydrogen Evolution Activity. Nano Lett. 22, 4276 (2022). Email for a free PDF.
X. Zhang, A.N. Penn, L. Wysocki, Z. Zhang, P.H.M. van Loosdrecht, L. Kornblum, J.M. Lebeau, I. Lindfors-Vrejoiu, D.P. Kumah. Thickness and Temperature Dependence of the Atomic-Scale Structure of SrRuO₃ Thin Films. APL Materials, 10, 051107 (2022). PDF [2]
A. Gero, H. Essami, O. Danino, L. Kornblum. Students’ Attitudes Toward Interdisciplinary Learning: A High-School Course on Solar Cells. Int. J. of Engineering Education, 38, 1130 (2022). PDF
S. Caspi, L. Shoham, M. Baskin, K. Weinfeld, C. Piamonteze, K.A. Stoerzinger, L. Kornblum. The Effect of Capping Layers on the Near-Surface Region of SrVO3 Films. JVST A 40, 013208 (2022). PDF (preprint). Supporting Information and raw data (xlsx)

2021

Y. Li, S. Kvatinsky, L. Kornblum. Harnessing Conductive Oxide Interfaces for Resistive Random-Access Memories. Frontiers in Physics 9, 642 (2021). PDF
L. Yang, L. Jin, L. Wysocki, J. Schopf, D. Jansen, B. Das, L. Kornblum, P.H.M. van Loosdrecht, I. Lindfors-Vrejoiu. Enhancing the Ferromagnetic Interlayer Coupling Between Epitaxial SrRuO3 Layers. Phys. Rev. B 104, 064444 (2021). PDF [2]
M. Spreitzer, D. Klement, T. Parkelj Potocnik, U. Trstenjak, Z. Jovanovic, M.D. Nguyen, H. Yuan, J. Evert ten Elshof, E. Houwman, G. Koster, G. Rijnders, J. Fompeyrine, L. Kornblum, D.P. Fenning, Y. Liang, W.-Y. Tong, P. Ghosez. Epitaxial Ferroelectric Oxides on Silicon with Perspectives for Future Device Applications. APL Materials 9, 040701 (2021). PDF
S. Chakrabarty, I. Offen-Polak, T.Y. Burshtein, E.M. Farber, L. Kornblum, D. Eisenberg. Urea Oxidation Electrocatalysis on Nickel Hydroxide: the Role of Disorder. J. Solid State Electrochem. 25, 159 (2021). Email for a free PDF.

2020

D. Miron, D. Cohen-Azarzar, N. Segev, M. Baskin, F. Palumbo, E. Yalon, L. Kornblum. Band Structure and Electronic Transport across Ta2O5/Nb:SrTiO3 Interfaces. J. Appl. Phys. 128, 045306 (2020). PDF (preprint). Supporting information and raw_data (xlsx)
D. Miron, D. Cohen-Azarzar, B. Hoffer, M. Baskin, S. Kvatinsky, E. Yalon, L. Kornblum. Oxide 2D Electron Gases as a Reservoir of Defects for Resistive Switching. Appl. Phys. Lett. 116, 223503 (2020). PDF (preprint). Supporting Information and raw data (xlsx)
B. Fisher, L. Kornblum, L. Patlagan, G.M. Reisner. The Dynamic Mixed-Metal-Insulator Phases in Self-Heated Needle-Like VO2 Single Crystals. Phys. Stat. Sol. B. 257, 2000074 (2020)
L. Wysocki, J. Schopf, M. Ziese, L. Yang, A. Kovacs, L. Jin, R.B. Versteeg, A. Bliesener, F. Gunkel, L. Kornblum, R. Dittmann, P.H.M. van Loosdrecht, I. Lidnfors-Vrejoiu, Electronic Inhomogeneity Influence on the Anomalous Hall Resistivity Loops of SrRuO3 Epitaxially Interfaces with 5d Perovskites. ACS Omega 5, 5824 (2020). PDF

2019

D. Miron, I. Krylov, M. Baskin, Eilam Yalon, L. Kornblum, Understanding Leakage Currents through Al2O3 on SrTiO3, J. Appl. Phys. 126, 185301 (2019). Top 2019 Editor’s Picks. PDF. Supporting Information and raw data (xlsx)
L. Shoham, M. Baskin, M.G. Han, Y. Zhu, L. Kornblum, Scalable Synthesis of the Transparent Conductive Oxide SrVO3, Adv. Electronic Mat., 6, 1900584 (2019). Email for a free PDF. Preprint
L. Kornblum, Conductive Oxide Interfaces for Field Effect Devices, Adv. Mat. Int., 6, 201900480 (2019). Email for a free PDF.
D.P. Kumah, J.H. Ngai, L. Kornblum, Epitaxial Oxides on Semiconductors: from Fundamentals to New Devices, Adv. Fun. Mat. 1901597 (2019). Email for a free PDF. Preprint
B. Fisher, L. Patlagan, L. Kornblum, Search for power-efficient wide-range reversible resistance modulation of VO2 single crystals. J. Phys. D: Appl. Phys. 52, 385302 (2019) – PDF
Y. Etinger-Geller, E. Zoubenko, M. Baskin, L. Kornblum, B. Pokroy, Thickness Dependence of the Physical Properties of Atomic-Layer Deposited Al2O3, J. Appl. Phys. 125, 185302 (2019). PDF [1]

2018

T. Jaffee, N. Felgen, L. Gal, L. Kornblum, J.P. Reithmaier, C. Popov and M. Orenstein, Deterministic Arrays of Epitaxially Grown Diamond Nanopyramids with Embedded Silicon-Vacancy Centers. Adv. Opt. Mat. 1800715 (2018)
D. Cohen-Azarzar, M. Baskin and L. Kornblum, Band offsets at amorphous-crystalline Al2O3–SrTiO3 oxide interfaces. J. Appl. Phys. 123, 245307 (2018). PDF [1] Supplementary and raw data (zip)
L. Kornblum, J. Faucher, M.D. Morales-Acosta, M. L. Lee, C.H. Ahn and F.J. Walker, Oxide Heterostructures for High Density 2D electron gases on GaAs. J. Appl. Phys. 123, 025302 (2018). PDF [1]
Also featured by AIP’s News “New Oxide and Semiconductor Combination Builds New Device Potential“
T.C. Kim, S. Ojha, G. Tian, S.H. Lee, H.K. Jung, J.W. Choi, L. Kornblum, F.J. Walker, C.H. Ahn, C.A. Ross, D.H. Kim, Self-Assembled Multiferroic Epitaxial BiFeO3-CoFe2O4 Nanocomposite Thin Films Grown by RF Magnetron Sputtering, J. Mat. Chem. C, 6, 5552 (2018)
M. Dogan, S. Fernandez-Pena, L. Kornblum, Y. Jia, D.P. Kumah, J.W. Reiner, Z. Krivokapic, A.M. Kolpak, S. Ismail-Beigi, C.H. Ahn and F.J. Walker. Single Atomic Layer Ferroelectric on Silicon. Nano Lett. 18, 241 (2018). PDF

2017 and earlier

L. Kornblum, D. P. Fenning, J. Faucher, J. Hwang, A. Boni, M. G. Han, M. D. Morales-Acosta, Y. Zhu, E. I. Altman, M. L. Lee, C. H. Ahn, F. J. Walker and Y. Shao-Horn, Solar Hydrogen Production Using Epitaxial SrTiO₃ on a GaAs Photovoltaic. Energy & Environmental Science 10, 377 (2017). PDF
L. Kornblum, M.D. Morales-Acosta, E.N. Jin, C.H. Ahn and F.J. Walker, Transport at the Epitaxial Interface Between Germanium and Functional Oxides. Adv. Mat. Interfaces, 2, 1500193 (2015)
L. Kornblum, E.N. Jin, O. Shoron, M. Boucherit, S. Rajan, C.H. Ahn and F.J. Walker, Electronic transport of titanate heterostructures and their potential as channels on (001) Si. J. Appl. Phys. 118, 105301 (2015). PDF [1]
L. Kornblum, E.N. Jin, D.P. Kumah, A.T. Ernst, C.C. Broadbridge, C.H. Ahn and F.J. Walker, Oxide 2D electron gases as a route for high carrier densities on (001) Si. Appl. Phys. Lett. 106, 201602 (2015). PDF [1]
D.H. Kim, X.Y. Sun, N.M. Aimon, J.J. Kim, M. Campion, H.L. Tuller, L. Kornblum, F.J. Walker, C.H. Ahn, and C.A. Ross, A three component self-assembled epitaxial nanocomposite thin film. Adv. Fun. Mat. 25, 3091 (2015)
E. N. Jin, L. Kornblum, D. P. Kumah, K. Zou, C. Broadbridge, J. H. Ngai, C. H. Ahn, and F. J. Walker, A high density two-dimensional electron gas in an oxide heterostructure on Si (001). APL Materials 2, 116109 (2014). PDF [1]
D.H. Kim, N.M. Aimon, X.Y. Sun, L. Kornblum, F.J. Walker, C.H. Ahn and C.A. Ross, Integration of Self-Assembled Epitaxial BiFeO₃-CoFe₂O₄ Multiferroic Nanocomposites on Silicon Substrates. Adv. Fun. Mat. 24, 5889 (2014)
L. Kornblum, Y. Paska, H. Haick and M. Eizenberg, A Beveled Oxide Study of the Surface Potential Modulation of Alkyltrichlorosilanes. J. Phys. Chem. C 117, 233 (2013). PDF [3]
L. Kornblum, B. Meyler, J. Salzman and M. Eizenberg, The electrostatics of Ta₂O₅ in Si-based metal oxide semiconductor devices. J. Appl. Phys. 113, 074102 (2013) – PDF [1]
L. Kornblum, P. Shekhter, Y. Slovatizky, Y. Amouyal and Moshe Eizenberg, Composition and Crystallography Dependence of the Work Function: Experiment and Calculations of Pt-Al Alloys. Phys. Rev. B 86, 125305 (2012) – PDF [2]
J.A. Rothschild, A. Cohen, A. Brusilovsky , L. Kornblum, Y. Kauffman, Y. Amouyal and M. Eizenberg, Fermi Level Tuning Using the Hf-Ni Alloy System as a Gate Electrode in Metal-Oxide-Semiconductor Devices. J. Appl. Phys. 112, 013717 (2012) – PDF [1]
I. Krylov, L. Kornblum, A. Gavrilov, D. Ritter and M. Eizenberg, Experimental evidence for the correlation between the weak inversion hump and near midgap states in dielectric/InGaAs interfaces. Appl. Phys. Lett. 100, 173508 (2012) – PDF [1]
L. Kornblum, B. Meyler, C. Cytermann, S. Yofis, J. Salzman and M. Eizenberg, Investigation of the Band Offsets Caused by Thin Al₂O₃ Layers in HfO₂ Based Si Metal Oxide Semiconductor Devices. Appl. Phys. Lett. 100, 062907 (2012) – PDF [1]
L. Kornblum, Y. Paska, J.A. Rothschild, H. Haick and M. Eizenberg, Probing the Electrostatics of Self-Assembled Monolayers by Means of Beveled Metal-Oxide-Semiconductor Structures. Appl. Phys. Lett. 99, 233508 (2011) – PDF [1]
P. Shekhter, L. Kornblum, Z. Liu, S. Cui, T.P. Ma and M. Eizenberg, Effect of H on the Chemical Bonding and Band Structure at the Al₂O₃/In_0.53Ga_0.47As Interface. Appl. Phys. Lett. 99, 232103 (2011)
Z. Liu, S. Cui, P. Shekhter, X. Sun, L. Kornblum, J. Yang, M. Eizenberg, K.S. Chang-Liao and T.P. Ma, Effect of H on Interface Properties of Al₂O₃/In_0.53Ga_0.47As. Appl. Phys. Lett. 99, 222104 (2011)
L. Kornblum, J.A. Rothschild, Y. Kauffmann, R. Brener and M. Eizenberg, Band Offsets and Fermi Level Pinning at Metal-Al₂O₃ Interfaces. Phys. Rev. B. 84, 155317 (2011) – PDF [2]
Z. Liu, S. Cui, L. Kornblum, M. Eizenberg, M.F. Chang and T.P. Ma, Inelastic Electron Tunneling Spectroscopy Study of Ultra-Thin Al₂O₃-TiO₂ Dielectric Stack on Si. Appl. Phys. Lett., 97, 202905 (2010)
S. Cui, X. Sun, L. Zuoguang, C.Y. Peng, W. Zhang, L. Kornblum, M. Eizenberg and T.P. Ma, High Quality Al₂O₃ for Low Voltage, High Speed, High Temperature (up to 250C) Nonvolatile Memory Technology. IEEE Elect. Dev. Lett. 31, 1443 (2010)

Refereed papers in Conference Proceedings

E.N. Jin, L. Kornblum, C.H. Ahn, F.J. Walker, Integrating 2D electron gas oxide heterostructures on silicon using rare-earth titanates. MRS Advances, 1, 287 (2016)
M. Eizenberg, L. Kornblum, (Invited) Origins for Fermi Level Control in Metal/High-k/Si Stacks With Inserted Dielectric Layers. ECS Transactions 58, 65 (2013) – PDF [4]

Conferences (Selected)

Y. Jia, C. Visani, L. Kornblum, E.N Jin, C.H. Ahn and F.J. Walker, Spin Transport and Precession in Epitaxial BaTiO₃/Ge Heterostructures. American Physics Society (APS) March Meeting, Baltimore MD, March 2016
E.N. Jin, L. Kornblum, C.H. Ahn and F.J. Walker, Band offset measurement of oxygen annealed SrTiO₃/Si. American Physics Society (APS) March Meeting, Baltimore MD, March 2016
L. Kornblum, J. Faucher, E.N. Jin, M.L. Lee, C.H. Ahn and F.J. Walker, Oxide 2D Electron Gases on Conventional Semiconductors, Tel Aviv – Tsinghua Xin Center 2^nd International Winter School, Tel Aviv, Jan. 2016
L. Kornblum, J. Faucher, E.N. Jin, M.L. Lee, C.H. Ahn and F.J. Walker, Oxide Heterostructures on Semiconductors: Growth and Transport. Materials Research Society (MRS) Fall Meeting, Boston MA, Dec. 2015
E.N. Jin, L. Kornblum, A. Kakekhani, S. Ismail-Beigi, C.H. Ahn, F.J. Walker, Integration of La-Doped SrTiO₃ with Si. Materials Research Society (MRS) Fall Meeting, Boston MA, Dec. 2015
E.N. Jin, L. Kornblum, C.H. Ahn, F.J. Walker, Band Offset and Electrical Characterization of La-Doped SrTiO₃. 22^nd Workshop on Oxide Electronics (WOE22), Paris, Oct. 2015
E.N. Jin, L. Kornblum, D. Kumah, C.H. Ahn, F.J. Walker, 2D Electron Gas Oxides on Si. European Materials Research Society (E-MRS) Fall Meeting, Warsaw, Sept. 2015
L. Kornblum, E.N. Jin, C. H. Ahn, F. J. Walker, Electronic carrier transport at epitaxial oxide-semiconductor interfaces. American Physics Society (APS) March Meeting, San Antonio TX, March 2015
E.N. Jin, L. Kornblum, D. Kumah, K. Zou, C. Broadbridge, C.H. Ahn, F.J. Walker, Band Offset Engineering of 2DEG oxide systems on Si. American Physics Society (APS) March Meeting, San Antonio TX, March 2015
E.N. Jin, L. Kornblum, D. Kumah, K. Zou, C. Broadbridge, C.H. Ahn, F.J. Walker, Conducting Oxide Interfaces on Silicon. 21^st Workshop on Oxide electronics (WOE21), Bolton Landing, NY, October 2014
M. Eizenberg, L. Kornblum, Tuning the Fermi level position at metal/high-k interfaces (invited). Device Research Conference (DRC), Notre Dame, IN, June 2013
L. Kornblum, Y. Paska, J.A. Rothschild, H. Haick, M. Eizenberg, Measurement of the Dipoles Induced by Molecular Monolayers Using a Novel Metal-Oxide-Semiconductor (MOS) Test Bed. Materials Research Society (MRS) Spring Meeting, San Francisco, CA, April 2011
J. Yang, X. Sun, S. Cui, T.P. Ma, L. Kornblum, M. Eizenberg, Low-Voltage, High-Speed Charge-Trap Memory Cell with Excellent High Temperature Retention, IEEE SISC – Semiconductor Interface Specialists Conference, San Diego, CA, December 2010
C.-Y. Peng, W.Q. Zhang, X. Sun, S. Cui, T.P. Ma, L. Kornblum, M. Eizenberg, A Charge-Trapping Memory Structure Featuring Low-Voltage High-Speed Operation and 250^°C Retention. Device Research Conference (DRC), University of Notre Dame, IN, June 2010
S. Cui, D. Eun, B. Marinkovic, C.-Y. Peng, X. Pan, X. Sun, H. Köser, L. Kornblum, M. Eizenberg, T.P. Ma, The Dual Role of PZT in Metal-PZT-Al₂O₃ Structure for Nonvolatile Memory Cell. IEEE-IMW International Memory Workshop, Seoul, Korea, May 2010
L. Kornblum, M. Lisiansky, Y. Roizin and M. Eizenberg, Study of Metal/High-k (ALD-Al₂O₃) Interfaces. Materials Research Society (MRS) Spring Meeting, San Francisco, CA, April 2010

[1] Copyright (2011-2022) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

[3] Reprinted with permission from J. Phys. Chem. C, 2013, 117 (1), pp 233–237. Copyright (2013-2022) American Chemical Society.